It depends on plasma regions you want to probe

Thank you for your answer. P. K. Karmakar

I have a capacitively coupled plasma generated by a RF power of 13.56 MHz. The plasma is used for thin film deposition and etching on silicon wafers. The measurements are needs to be done at the plasma sheath (just above the silicon wafer). I assume that the best choice here is disk-like langmuir probe. Does it make any difference in the way we calculate the plasma parameters using the I-V curve of the probe when we use a disk-like probe instead of the usual wire probe?

yes there is a difference you need different theories for calculations for both the probes.The exposed area which you take to measure also is different in both the probes.In planar probes the ions are collected only in one direction and hence the plasma potential (electron saturation regime)is clearly visible in I-V characteristics curve whereas for a wire probe due to sheath growth with increased V, the plasma potential is difficult to find.