I would like to know if there is a difference between water adsorption on a silicon wafer surface and a silicon oxide surface since there is always an oxide layer on a pure silicon surface. If they are different, does anyone have a reference for such an isotherm for a silicon surface in room temperature like the one by Asay and Kim?
Article Evolution of the Adsorbed Water Layer Structure on Silicon O...
The water is reactive towards the silicon surface (Contact angle > 0°). Water is even reactive to freshly pretreated silicon wafer surfaces as demonstrated within the mentioned publication.
Article Detailed statistical contact angle analyses; “slow moving” d...
Within the contribution you also find the reference to Hermansson et. al. which contains interesting measurements with differently pretreated wafer surfaces.
Yes, water may be adsorbed on pure silicon surface due to open dangling bond of silicon surface. However, if the surface is passivated by oxygen i.e. silicon oxide then the interaction with water decreased. You may done FTIR for verification. So many Research articles are available.
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