Among PECVD and Ebeam evaporation of SiO2 thim film, generally which method will give a better film quality in terms of density. and why?
PECVD gives better uniformity and conformance SiO2 thin film. Assuming substrate and other process conditions are wisely chosen.
Dear Jerry Liu,
Three films of SiO2 deposited by three different methods (chemical vapor deposition, electron beam evaporation and r.f. sputtering) were studied to show the effect of the method of preparation on the optical constants of the films. Of the three studied films, the film prepared by electron beam gun deposition showed refractive index values (n) close to the bulk material in the spectral range 300–850 nm:
https://www.researchgate.net/publication/225201480_The_effect_of_the_deposition_method_on_the_optical_properties_of_SiO2_thin_films
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This paper presents a comparative study of SiO/sub-2/ thin films prepared at room temperature by ion beam induced chemical vapor deposition (IBICVD) and plasma enhanced chemical vapor deposition (PECVD) methods. The films are characterized by AFM, TEM, RBS, ERDA, NRA, X-ray reflectometry and spectroscopic ellipsometry. ... This higher value is a consequence of the low roughness and high density of the IBICVD films:
https://ieeexplore.ieee.org/document/955633
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PECVD is a more reliable and reproducible technique and allow deposition on large area, especially useful for low stress films of SiO2, and would allow growth of high quality dense SiO2 with the application of temp. during growth.
Whereas E-beam technique would have a limitation on the substrate size, and if the process is not well optimized, properties can vary from run to run
ULVAC equpment will prepare silicon dioxide layer with thickness of 200 nm by dissociation of molecular assemly of tetraethylortosiloxen molecules by 400 oC. The IV(current-voltage) characteristics may be tested by Kethley probe station with micro probes for small device's analysis.
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