I have recently analyse a InGaN/GaN MQW grown by MOCVD on sapphire substrate. The HRXRD results of omega rocking curves yields the FWHMs of (0002) for GaN were broader than the FWHM of (10-15). This is inconsistent with the typical result of GaN in the literature. Usually the (0 0 0 2) FWHM of GaN is much narrower than (10-15), can anyone help me the reason behind broader FWHM of (0002) plane compared to (10-15) with references.

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