For example, ALD Temperature window of ZnO (DEZ-H2O process) is 125-170 degree celsius ([1] A. Yamada, B. Sang, M. Konagai, Applied Surface Science 112, (1997) 216–222. [2] El B. Yousfi, J. Fouache, D. Lincot, Applied Surface Science 153 (2000) 223–234. [3] J.A. Libera, J.W. Elam, M.J. Pellin, Thin Solid Films 516 (2008) 6158–6166). But recently, It is reporteded that ALD Window temperature regime is 50-250 C (V. Roge, N. Bahlawane, G. Lamblin, I. Fechete, F. Garin, A. Dinia and D. Lenoble ‘Improvement of the photocatalytic degradation property of atomic layer deposited ZnO thin films: the interplay between film properties and functional performances’, J. Mater. Chem. A, 2015, 3, 11453). The high temperature ALD-ZnO shows extraordinary photocatalytic activity than low temp ALD-ZnO. So which one is better ALD temperature window  for photocatalytic activity?. of course , decomposition of Zinc precursor starts at higher temperature but it is negligible for 250 degree celsisus. In addition, It wont affect the coating thickness much. How does ALD-controllable deposition work in the enhancement of photocatalytic activity, particularly in region of 125-170 degree celsisus?