The answer would depend on factors such as the plasma source, exposure time, sample temperature, etc. so generally speaking each sample should be investigated to better understand the surface characteristics of each sample following plasma treatment. This may involve using a surface analysis technique such as atomic force microscopy (AFM) or XPS (aka ESCA) that can reveal changes at or near the surface layers of the Si sample under investigation. See for example: Article Plasma cleaning and activation of silicon surface in Dielect...

https://researchers.dellmed.utexas.edu/en/publications/hydrogen-plasma-cleaning-of-the-si100-surface-removal-of-oxygen-a