I want to measure the contact resistance of metal oxides thin films deposited on top of n-type silicon wafers. Can I use the Transfer length method for measuring the same?
To measure the contact resistance between the metal and undelaying semiconductor layer you can use the the three probes methods.
This method is explained in detail in the paper at the link:Article A. Zekry and G. El-Dllal, “ effect of MS contact on the elec...
Best wishes
You can. Is your metal oxide film is semiconducting? you just have deposit metallic contact on you film in a pair with different separation. Analyze the data. you will get contact resistance and resistance of your metal oxide film .
Thank you so much sir for your suggestion.
Yes, I want to do this for metal oxides film which are semiconducting in nature.
Thank you Mr. Thomas for sharing this information.
Can we also estimate sheet resistance of our semiconducting film using this?
In literature many people are using it for measuring sheet resistance also.
You can do anything but the most important will be the interpretation of the measured data. The TLM is intended for contact types where you expect linear characteristic of Resistance vs pattern distance.
So, in the case of you have conductive metal oxides I would say yes but if your ixides have more insulating character you could pattern them as a continous line with known number of squares in order to exactly define the sheet resistance - and consequently the specific contact resistance.
To measure the contact resistance between the metal and undelaying semiconductor layer you can use the the three probes methods.
This method is explained in detail in the paper at the link:Article A. Zekry and G. El-Dllal, “ effect of MS contact on the elec...
Best wishes
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