I'm recently concerning ultramicrotomy of SiC/ZrC film for TEM sample preparation.
The film lies on metal intermediate layer, which itself lies on alloy substrates, so in such sandwich structure it will be hard to observe both interfaces if the sample is prepared by ion milling of the cross-section, and ultramicrotomy seems workable. But I'm worried about the stiffness of SiC/ZrC since they are so close to the dimond and may cause the dimond knife broken.
So can I get good result by ultramicrotomy without breaking the dimond knife?
Or is there any other TEM sample preparation technique more suitable for this "sandwich" structure?