If we deposited two contacts to p type silicon. the back contact is Al and the front contact is ITO. Is the device could generate photocurrent when applied to solar simulator?
Also if porous silicon has been formed and these pores filled with metal nanoparticles. Is the device could generate photocurrent with only p type Si?
Thanks in advance
Dear Rehab,
what did you find? If you measure the dark characteristics of this structure and find rectifying I-V curve , then this structure can work as a solar cell generating photocurrent and possessing an open circuit voltage. From the conceptual point of view this structure can work as a solar cell. You can find in the literature solar cells made from such layer structure. In my next post i will comment on your second question.
Best wishes
The second part of the question:
Also if porous silicon has been formed and these pores filled with metal nanoparticles. Is the device could generate photocurrent with only p type Si?
If the metal forms a Schottky contact with the p-silicon then the metal- p silicon can act a solar cell generating photo current. It is so that work function of the metal is such that its workfunction lies above the fermi lvel of the p-type material with about .8 electron volt playing the role of the type silicon.
Best wishes
Thank you very much Dr Abdelhalim for your answer. Yes, I measured I-V characteristics in dark and the curve is rectifying, but when measuring in illumination state with this structure of the device (Al-P Si-ITO), There is no photocurrent generated. So I want to know why
Also, For this structure (Al-P si-Porous Si- NPs-ITO), the generated photocurrent is very very small. the short circuit current in pico Amber.
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