Is it possible to obtain emission from N-face grown GaN light emitting device? How efficient the emission could be as compared to Ga-face devices?
Dear Avinash,
it is possible to obtain emission from N-face grown GaN devices. Actually, it is/was often unknown whether the GaN film is N-face or Ga-face grown since it is/was difficult to measure it. However, there are some studies where they can controll the growth and can measure whether it is N- or Ga-face. The different terminating surfaces can have different etching behaviours, which can lead to a difference in light extraction.
In one paper (see below) a group found a difference in the low-temperature PL of N-face and Ga-face grown GaN films on ZnO substrate.
Have a look here for further details: Article Growth of Ga-face and N-face GaN films using ZnO Substrates
Hope that could help you a bit!
