i have to made tio2 based resistive switching device so for thin film of tio2 which technique is better thermal evaporation or e beam evaporation?
It will be difficult to evaporate TiO2 with thermal evaporation,
whereas e-beam evaporation would allow you to evaporate TiO2.
E-beam is certainly much easier. Any PVD evaporation of oxides will result in usually a nonstoichiometric oxygen deficient film. Some e-beam evaporators may be equipped with oxygen plasma lines to assist with oxide PVD. If you want to deposit stoichiometric films, consider using oxygen plasma assisted PVD if it is available.
Ebeam is normally used for TiO2, if you have target sputtering is the easiest way to have a uniform TiO2 layer. I hope it works for you.
I would recommend (a) sputtering of TiO2 or (b) e-beam evaporation of Ti followed by annealing in oxygen or simply in air atmosphere. However, both approaches will require some optimization with regard to your application.
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