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i have to made tio2 based resistive switching device so for thin film of tio2 which technique is better thermal evaporation or e beam evaporation?
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Zno based Thin film Transistors used mainly Glass, Can we use Silicon instead of Glass
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I have to fabricate Thin Film Transistor on Silicon Substrate so which material i can use in channel layer?
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I am using mask technique to grow source and drain in tft . I need distance between source and drain greater than 50 micron because mask is available more than 50 micron in lentgh.
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