Zno based Thin film Transistors used mainly Glass, Can we use Silicon instead of Glass
Highly transparent ZnO-based thin-film transistors ~TFTs! are fabricated with optical transmission ~including substrate! of ;75% in the visible portion of the electromagnetic spectrum. Current– voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ;107. Threshold voltages and channel mobilities of devices fabricated to date range from ;10 to 20 V and ;0.3 to 2.5 cm2 /V s, respectively
Research groups are studying new approaches in order to optimize processes,
enhance TFT performance and reduce the involved costs. In line with this, there is a
constant search for alternative and sustainable oxide semiconductors and dielectrics, both in terms of composing materials (eventually even hybrid inorganic/organic) and structures (where nanostructures as nanowires and nanoparticles are deserving increased attention for ultimate performance levels) [30]. Another important topic is the migration of vacuum processing to simpler solution processing, such as spincoating or inkjet printing. Although the initial works on solution processed oxide TFTs were based on high temperature processes and yielded low performance [31– 33], nowadays there are quite interesting reports on these devices processed at temperatures as low as 200 ıC, reaching similar characteristics to their physically processed counterparts
Dear Aswin,
Could you plz specifiy the silicon substrate required? It is helpful for my research also.
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