Hi to everyone, I would like to ask if you know about any possible influence of HSQ resist on the performance of a graphene self-switching diode (GSSD).

During the last fabrication batch, the HSQ was used to protect the monolayer graphene patterned in such way to obtain a self-switching diode. The HSQ remained also in correspondence of the trenches and, with our surprise, even if the fabrication yield was very high, all the measured diodes present a sort of FET-like I-V curve when measured in DC (see the attached figure). In some way, we can say that the gates surrounding the channel in a GSSD are short-circuited and connected to one of the electrodes used to measure the device. The behavior in the figure is a source of doubts for me, since I expected a diode-like curve, whereas here it seems to behave more like a FET, as I have said, or a sort of varistor. Any idea?

Thanks a lot!

M