I've tried to simulate breakdown voltage of a AlN/GaN HEMT. But it always fail to complete when calculating Impact Gen.
This is my Impact model:
impact SELB region=4 AN1=2.11e9 BN1=3.689e8 AP1=4.39e6 BP1=1.8e7 BETAN=1 BETAP=1 AN2=2.11e9 BN2=3.689e7 AP2=4.39e7 BP2=1.8e7 EGRAN=1.0e7
And error is:
Cannot trap. Cannot reduce biasstep. Choose smaller bias step size, or check structure and or models.