I am working on modeling photodiode in COMSOL and need to model the layer specifications with p, p+, and n, n+ dopings in four different semiconductor layers. Can anyone send some useful links or samples on how to do that? If someone knows well about generating that sort of doping profile for different semiconductor layers then please share it.
Any kind of help will be much appreciated.
Regards,
Maria
You may add 4 independents nodes of Analitical doping model. Every node corresponds to certain impurity type (p/n) and concentration. All these nodes should be selected in Domain selection property. Select "Distribution: Box", "Base: corner". In this case "Base position" coordinates should be correspond to bottom left vertex of a rectangular domain. "Width" and "Depth" is the dimensions of the domain.
Dear Mikhail,
Many thanks for your Answer. Yes i have used Analytical model to define doping profiles. Here in the picture you attached, i am confused about the y axis of the Base position. Should this y axis be the thickness of the layer we want to do p or p+ doping or it should be something else??
Dear Mikhail,
Many thanks for your Answer. Yes i have used Analytical model to define doping profiles. Here in the picture you attached, i am confused about the y axis of the Base position. Should this y axis be the thickness of the layer we want to do p or p+ doping or it should be something else??
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