If GaSb or III-V type semiconductor is taken as the case and 1 keV energy Ar ion is used ,how can I calculate the sputtering yield of individual element from SRIM?
Hi,
as in your case if the compound is made of different elements there is a separate sputtering yield for each element.
Sputtering Yield = (Number of Sputtered Atoms)/(Number of Incident Ions)
To actually be sputtered, the atom's energy normal to the surface must still be above
the surface binding energy when it crosses the plane of the surface.
The surface binding energy (SBE) of an atom to a surface is known only for
a few materials, but it is common to use the heat of sublimation
as an estimate. Typical values are suggested when you set up the TRIM calculation.
The sputtering yield is very sensitive to the surface binding energy (SBE) which you
input to the calculation. Be aware that for real surfaces, this energy changes under
bombardment due to surface roughness and damage, and also due to changes in the surface stoichiometry for compounds. The sensitivity of sputtering yield to surface binding energy may be displayed during the calculation by using the plotting menu. The plots of sputtering yield to SBE are accurate to about 30%.
In the following I'm attaching some step-guide which can be helpful in your case.
Best,
Angelo
Hey,
You cannot simulate the actual sputtering yield of compounds using SRIM. The surface composition will be altered compared to the bulk due to preferential sputtering and this effect is not taken into account in SRIM. A different surface composition will result in a different ratio of the partial sputtering yields.
One way of enhancing the accuracy is by using TRYDIN or SD.Trim.SP. These simulation packages do take surface composition changes into account.
Best regards,
Roeland
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