I am trying to sputter Cu. I am facing problem to decide the values of different parameters like sputtering time, power, and pressure, such that I will obtain a desired deposition.
power and pressure are very important parameters...as power increases deposition rate increases...hence will affect on crystalline behaviour of the deposited film, same way pressure also affects on the kinetic energy of add atoms and affects on the film nature....temperature...if more than 250c will be fine for formation of crystalline films....other parameters can be kept constant for certain deposition and check the results...best of luck
Thanks for the comments and recommendations. I changed the way I was doing the sputtering to DC and modified the power level and distance. I was able to successfully DC sputter MgO with just 10 watts of power. The thin films measured 300-800 Angstroms. I was only trying to tune in the parameters, now its time to tweak the setup and shoot for real number. See the pictures attached.
Happy to help you....now kindly check the quality of the film....is it matching your requirements and expectations.....if issues are there then parameters can be modified....here working distance set is also appearing very small...if you keep around 50mm then its fine...otherwise there are scope for magnetic field lines to touch substrate and then may be adatoms may be deviated and not allow to find least energy state...hence crystal quality may differe.