Dear Annie,

The doping file you mentioned is not Analytical Doping, it is an ASCII doping file.

Adding an analytical doping (the formula you used to generate your x-y doping file) is easy:

• The placement of an analytic profile is performed in two steps:  Define the baseline. The baseline is used to determine the lateral extent of the profile and can also serve as the reference point for the depth of the peak position. • Mesh > Define Ref/Eval Window > Line. • In the view window, click the first point of the baseline. • Click again to define the end point of the baseline. • In the displayed dialog box, enter the name for the baseline and click OK (sdedr:define-refinement-window "Myline" "Line" (position 0 0 0) (position 1 0 0) )

• Define the shape of the profile itself.  Device > Analytic Profile Placement.  Type the Placement Name field.  Select the baseline from the Ref/Win list.  In the Profile Definition group box, enter the Name field.  Select the Gaussian option from the Profile Type list and species from the Species list.  In the Concentration group box, fill in Peak Concentration, Peak Position, Junction and Depth.  In the Lateral Diffusion group box, enter the Factor field.  Click Add Placement.

(sdedr:define-gaussian-profile "AProfileDef_1" "BoronActiveConcentration" "PeakPos" 0 "PeakVal" 1e20 "ValueAtDepth" 1e15 "Depth" 0.1 "Erf" "Factor" 0.8 ) (sdedr:define-analytical-profile-placement "AProfilePlacement_1" "AProfileDef_1" "Myline" "Both" "NoReplace" "Eval" )

However, sDE editor can read and modify files, previously generated by itself or other Process simulation tools

Hi Annie,

Best way to learn how to use analytic doping profile is to follow examples provided from Synopsys.

Basically, analytic doping profile in SDE follows Gaussian, and its shape depends on peak value, value at depth, depth, type of function, and factor.

Thank you,

Junsik Yoon

Annie Meneses Gonzalez

In addition to the answer provided by Muhammad Hamza El-Saba , you can load a transistor based on process simulation from Sprocess tool, make a cutline at the region of interest and see the doping profile shape. then reproduce it in SDE using the Gaussian equation parameters.

I encourage you to do process simulations anyways, especially if you are studying only in 2D. It is much easier and way more precise than SDE.

There are plenty of documentations, tools manuals, and tutorials available in Solvnet. Take a look at those !

(you'll find the detailed on how to input external doping profiles in SDE manual chapter "Generating Mesh and Doping Profiles").