At instance, etching is achieved by the two familiar ways. Those are Isotropic and Anisotropic etching. In some cases, vertical etching also majorly attained, that too under direction dependent etching. I am wondering that how acids and alkaline solutions are preferred in different types of etching process and why ?
Especially, In order to etching Si crystalline thin film for semiconductor processing through anisotropic etching, I could see alkaline solution is preferred. Why not with Acids? and acids are preferable for isotropic etching (etch rate is same in all direction) process that it mentioned in the below literature.
Article High speed silicon wet anisotropic etching for applications ...
Thank you Professor @Martin Stutzmann!
Here is my email ID for your perusal. (sritech20@gmai;.com)
I always use acid solutions to etch semiconductors. Morphology depends on many factors: acid concentration, etching time, current density, sample illumination. For anisotropic etching, the characteristics of the semiconductor are important: type , surface orientation, doping.
For example, vertical pores form on the (100) surface of an n-type semiconductor.
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Thanks for your contribution Yana Suchikova . How do we do etch stop for certain circumstances after done with laser scribing ? Any idea?
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