Free Thermal Simulation Modeling software ?

error in running a model in Abaqus

Excessive rotation of nodes in node set ErrNodeExcessRotation-Step1

17 August 2021 0 0 View

error in modelling model in Abaqus

Excessive rotation of nodes in node set ErrNodeExcessRotation-Step1

17 August 2021 0 0 View

MGL tools

20 June 2021 0 0 View

fatal error

When I tried to energy minimization my system, I got fatal error as below. Fatal error: Atomtype opls_116 not found Although I've already added this line: ; include water #include "oplsaa.ff/spc.itp" to [molecultype] directive in my topology.

16 June 2021 0 0 View

fatal error

16 June 2021 0 0 View

fatal error

16 June 2021 0 0 View

fatal error

16 June 2021 0 0 View

i have some problem with chtMultiRegionSimpleFoam

--> FOAM FATAL ERROR: Maximum number of iterations exceeded From function Foam::scalar Foam::species::thermo::T(Foam::scalar, Foam::scalar, Foam::scalar, Foam::scalar (Foam::species::thermo::*)(Foam::scalar, Foam::scalar) const, Foam::scalar (Foam::species::thermo::*)(Foam::scalar, Foam::scalar) const, Foam::scalar (Foam::species::thermo::*)(Foam::scalar) const) const [with Thermo = Foam::hConstThermo >; Type = Foam::sensibleEnthalpy; Foam::scalar = double; Foam::species::thermo = Foam::species::thermo >, Foam::sensibleEnthalpy>] in file /home/ubuntu/OpenFOAM/OpenFOAM-4.1/src/thermophysicalModels/specie/lnInclude/thermoI.H at line 66. FOAM aborting #0 Foam::error::printStack(Foam::Ostream&) at ??:? #1 Foam::error::abort() at ??:? #2 Foam::heRhoThermo >, Foam::sensibleEnthalpy> > > >::calculate() at ??:? #3 Foam::heRhoThermo >, Foam::sensibleEnthalpy> > > >::correct() at ??:? #4 ? at ??:? #5 __libc_start_main in "/lib/x86_64-linux-gnu/libc.so.6" #6 ? at ??:?

24 March 2021 0 0 View

Looking for Materials with high thermal expansion coefficient and high temperature resistance?

03 March 2021 8,272 1 View

Resistor definition in Piezoelectric bimorph with ANSYS workbench

Hello, good day! I am trying to simulate similar bimorph piezoelectric harvester with below commands. However, the output power doesn't change with resistor value. Please help to find the reason. ET,10,CIRCU94,0 !SET UP RESISTOR R,1,100000 !RESISTANCE VALUE TYPE,10 !SET ELEMENT TYPE E,1,2 !CREATE RESISTOR BETWEEN NODES 1 AND 2 Thanks in advance Regards,

02 March 2021 0 0 View

Bart Jourquin

Could you specify the type of application to study ?

You'll find lot of commercial softwae, but also some open-source alternatives such as https://github.com/oemof/tespy

Mohammed el amin Bourouis

LS-DYNA is an advanced general-purpose multiphysics simulation software package developed by the former Livermore Software Technology Corporation (LSTC), which was acquired by Ansys in 2019.While the package continues to contain more and more possibilities for the calculation of many complex, real world problems, its origins and core-competency lie in highly nonlinear transient dynamic finite element analysis (FEA) using explicit time integration. LS-DYNA is used by the automobile, aerospace, construction and civil engineering, military, manufacturing, and bioengineering industries.

Mohamed-Mourad Lafifi

Dear Mathu Sridharpanday,

Try to use Dynamic Thermal Management, NANS technology, NANS service. Also, I suggest you see links on the topic.

https://mdpi-res.com/d_attachment/energies/energies-11-00631/article_deploy/energies-11-00631-v2.pdf

https://www.engr.colostate.edu/~aam/pdf/conferences/179.pdf

https://www.sciencedirect.com/science/article/abs/pii/S0045790618300296

https://www.hightechinstitute.nl/courses/advanced-cooling-of-electronics-online-module/

Article Data-driven predictive control for unlocking building energy...

Article Optimal Planning of Dynamic Thermal Management for NANS (N-A...

Article Real-time simulator and offline/online closed-loop test bed ...

Best regards

Mathu Sridharpanday

Dear Prof.Bart Jourquin

Thanks for reaching me out. This application is purely a semiconductor fan-out backside wafer deposition to spread and reduce heat from 200 deg. We try to deposit MoS2 nanosheets as heat spreader (5 um) over Si wafer. Following deposition, SiO2 as thermal interface material (2 um) over MoS2. again, MoS2 deposition ( 5 um) will be carrying out over SiO2 layer. The coating sequence will be Si wafer (520 um)/MoS2 (5um)/SiO2 (2um)/MoS2 (5um) without finn or heat sink. We would like to analyse heat that produce from front side of Si wafer and at backside try to abosord those heat and spread throughout the depositing layer down to room temperature.