The most important property for the epitaxial growth is the lattice matching between the substrate and the deposited material. Mathing means complete coincidence between the atomic arrangement at the interface of the film and substrate. This condition can be realized easily in homoepitaxy. In heteroepitaxy of two different material the lattice mismatch must be limited to a small percentage deviation while keeping the thickness of the epitaxial film under some critical thickness otherwise dislocations begins to appear in the deposited film. For more information please follow: users.wfu.edu/ucerkb/Nan242/L12-Epitaxy.pdf

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Thank you very much for your help, Abdelhalim abdelnaby Zekry and Lior Kornblum