My host material is a p-type semiconductor and my dopant is an electron donor atom so what result should I expect for crystallite size and microstrain of the doped material from powder xrd of the material.
Note: the ionic radius of dopant atom is greater than the host atom and the results which I get from calculations are the crystallite size decreases and microstrain increases.
Also the peaks in doped material shift towards lower 2theta angle when compared to the peak position in pristine material.
TDMC- it is a transition metal dichalcogenides?
If so, firstly, the effect of the dopant depends strongly on the nature of its introduction - intercalation or substitution. Secondly, my personal experience tells me that tension, of course, will always only increase with doping. But the size of crystallites can behave differently. For example, it is very difficult to grow a TiSe2 single crystal intercalated with vanadium. But the crystals where vanadium replaces titanium grow simply very easily and are very large.
It all depends on the specific system.
In your specific case, when the ionic radius of the dopant is larger than the radius of the base metal, both substitution and intercalation will lead to a shift of reflections to the region of small angles, since the unit cell constants will increase.
Yes Sir TMDC stands for transition metal dichalcogenides. And yes in my case the dopant is substituting the host cation and the ionic radius of dopant is more than the ionic radius of host.
Thank you very much for your explanation, my problem is solved now.
I think there is correlation between crystallite size and mictostrain. Due to mismatch in atomic size, valancy, electron negativity between dopant and host atoms, strain in crystal structure increases and it in turn reduces the crystallite size. Variation in these parameters depends on mismatch....
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