I have synthesized Sb incorporated GeSe ternary alloys. The proportion of Sb varies as 10% and 15% by weight proportion. In 15% Sb incorporated GeSe, I am getting direct bandgap to be 0.94eV and indirect bandgap is 0.52eV. I have determined the bandgap by recording the UV-Vis spectra by DRS method. So I want to know that is it possible to get direct bandgap greater than indirect bandgap?

If so and if anyone can give any reference then it will be very helpful. Thanking in anticipation.

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