I had deposited Ni (350nm) and Cr (100nm) on a Si-SiO2 wafer. But when I stripped the photoresist (LOR 3B as first layer, and then S1818) the devices were destroyed. I guess this is because of poor adhesion. But in some articles I have read that Ni and Cr are good adhesion materials on SiO2. Can anyone justify that?

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