I need to some infomations or articls about leakage current mechanism (Poole-Fränkel effect, Fowler-Nordheim, Trap assisted tunneling current...) in AlGaN/GaN HEMT transistor? ( theoretical model )
Zakaria, You can see the following IEEE TED papers from our group on the Gate Leakage Mechanisms in AlGaN/GaN HEMTs.
1. http://ieeexplore.ieee.org/abstract/document/6567938/
2. http://ieeexplore.ieee.org/document/6937155/
For leakage current mechanisms in GaN-based MIS-HEMTs please see the following paper:
G. Dutta, N. DasGupta, and A. DasGupta, "Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its Modeling," IEEE Transactions on Electron Devices [ DOI: 10.1109/TED.2017.2723932] (In press)
Dear Zakaria Rahioui,
Please check the link below
1.https://aip.scitation.org/doi/10.1063/1.4974959#:~:text=The%20gate%20leakage%20current%20mechanism,I).
2. Article Gate current leakage and breakdown mechanism in unpassivated...
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