Can I simulate any RRAM device in Silvaco or Sentaurus TCAD? If Yes, then how can I define the RRAM device properties in TCAD?

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Md. Yasir Bashir

when you see most of the RRAM stacks, there no unified theory that governs the transport mechanism in them. different stacks shows different Transport mechanism, even the type of electrodes changes the transport mechanism (unipolar to bipolar switching or redox based ion conductive filament formation instead of traps and vacancies type of conductive filaments ). so, there is no universally accepted model for it. thus I believe at this point of time its not possible to do simulation in TCAD.

Shishir Deb Nath

Md. Yasir Bashir bhai, thanks for the reply. I have got your point. & You are right.

Recently I have seen a paper on CBRAM (Ag/GeSe3/Pt) device. The authors used 'Silvaco Victory device simulator' to simulate the device by using Mott Gurney model and they successfully benchmarked the experimental result of the device.

But I have not found any manual of Victory device simulator of Silvaco or the software. I need help. I am requesting You to help me with this software or manual.