As mentioned by Prof. Abdelhalim abdelnaby Zekry sir, the scaps is not a material simulator, it basically gives you the results based on some numerical solutions. If you want to go for simulation based on heterojunction/ homojunction for any material, the parameters including Bandgap, electron affinity, Defects, recombination coefficients etc should be given as input at the proper places. For the GaInP absorption file, you can look for some literature, from where it can be extracted. After extraction, extrapolate that data for AM 1.5 G spectrum. Be careful about defects, as the defects play an important role in intrinsic p-type/n-type conductivity in a material. What I am saying is in general for any material(s). Defects may be the single donor (acceptor), double donor(acceptor), or amphoteric. Place them with proper specification and level with respect to the CBM or VBM (you may refer to literature, as default it is given as 0.6 above VBM). The GaInP has a bandgap value of 1.6-1.9 eV, the electron affinity of 4.1 eV, dielectric constant of 11.8 and lattice constant of 5.65 Angstroms (not needed in Scaps).
And for metallic contacts, you may use the proper work function of metals (or for simplicity use ohmic contact) for GaInP based solar cells.
Kindly specify your requirements, so that one can suggest properly. If you want to go for DFT calculation there is Quantum Espresso for you. Even you can go for molecular dynamics study using the same. Find the link for instructions and download it below.