I have tried many different metal stacks (using literature survey) to form the ohmic contacts on C-face 4H-SiC single crystalline substrates. Even, rapid thermal annealing has been done after metal deposition bot not getting ohmic contacts on C-face SiC.
However, Ohmic contacts have been observed on Si-face of 4H-SiC substrates but not on C-face.
Can anyone suggest me, how can I get ohmic contact on C-face SiC ?
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