AT WHICH TEMPERATURE WE SHOULD ANNEAL P TYPE Si /Al TO GET OHMIC CONTACT?

11 November 2022 1 9K Report

I am trying to make ohmic contact on p type Si with Al at what temperature and condition I should anneal the sample and how much thickness of the Al should be deposited.

Nikolay Filippov

Anneal with 410C 30min in N2 + H2 ambient should be sufficient.

Some Al goes into alloy with Si, but not too much. So 200 nm is OK. But the thickness of Al must depend on the profile of the contact window so that there is no break on the step.

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