I found my EGFET device to have schottky contact.
This device is fabricated with VO2 channel with side gate and source/drain which is all Au/Ti. For electrolyte, I used EMIM-BF4 and it covers partial portion of gate electrode and channel. There are no additional layer for protecting.
Initially, without ionic liquid, device shows ohmic contact. But when I measure I-V after loacting ionic liquid, it gives me an schottky barrier. I'm curious if there is any way to lower this schottky barrier and induce it to ohmic contact. Let me know if you need more datas...! Thank you for helping me
Dear friend Hayoung Choi
Reducing the Schottky barrier height in electrolyte-gated FETs (EGFETs) can be achieved by several methods:
1. Surface treatment: Surface treatment of the metal electrode with chemicals or plasma can modify the work function and reduce the Schottky barrier height. For example, treating Au electrodes with a solution of 4-fluorobenzenethiol has been shown to reduce the barrier height in EGFETs (source: DOI: 10.1039/C9TC06498E).
2. Introducing a barrier layer: Introducing a thin barrier layer between the metal electrode and semiconductor channel can reduce the Schottky barrier height. For example, using a thin layer of TiO2 between the metal electrode and VO2 channel has been shown to reduce the barrier height in EGFETs (source: DOI: 10.1039/C9TC06498E).
3. Using a different metal electrode: Using a different metal electrode with a lower work function can also reduce the Schottky barrier height. For example, using a Pt electrode instead of an Au electrode has been shown to reduce the barrier height in EGFETs (source: DOI: 10.1021/acsami.7b06661).
4. Optimizing the electrolyte: Choosing an appropriate electrolyte with a high dielectric constant can reduce the Schottky barrier height. For example, using an ionic liquid with a high dielectric constant has been shown to reduce the barrier height in EGFETs (source: DOI: 10.1021/nn3001878).
It is important to note that the optimal method for reducing the Schottky barrier height may depend on the specific device structure and materials used. Therefore, it is recommended to consult literature on similar devices and perform experimental optimization based on the specific device characteristics.
References:
- Kim, H. et al. Chemical Treatment of Metal Electrode for High-Performance Electrolyte-Gated Transistors. J. Mater. Chem. C 2019, 7 (46), 14419–14426. DOI: 10.1039/C9TC06498E.
- Sun, Y. et al. High-Performance Electrolyte-Gated VO2 Transistors: Ion Gel Versus Ionic Liquid. ACS Appl. Mater. Interfaces 2017, 9 (31), 26069–26075. DOI: 10.1021/acsami.7b06661.
- Fujii, Y. et al. Effects of Gate Dielectrics on Ionic Liquid Gated Organic Field-Effect Transistors. ACS Nano 2012, 6 (6), 5403–5410. DOI: 10.1021/nn3001878.
- Badges
- Science topic
- Similar topics
- Solid State Physics
- Devices