Please help with the protocol: How can we prepare ohmic contacts for gallium oxide crystal ?

09 February 2023 1 6K Report

We want to make a vertical Schottky diode on a commercial Ga2O3 crystal. Characteristics of the crystal:

β-Ga2O3 (-201), Sn-doped, Nd-Na = 5e18 (cm-3), h=680 micron.

We are going to prepare the ohmic contact with Ti/Au (50/150 nm), and the Schottky barrier with Ni/Au (50/150 nm) by e-beam evaporation.

We have not worked with this material and do not know what is the surface cleaning procedure before deposition of the contacts? We do not have RIE, only common reagents.

Cyril Robinson Azariah J.

To prepare ohmic contacts for a gallium oxide crystal, you should follow these steps:

Surface cleaning: It is important to clean the surface of the crystal before depositing the metal contacts. You can use the following procedure:Sonicate the crystal in acetone for 10 minutes, followed by isopropanol for another 10 minutes. Rinse the crystal in deionized water and blow dry with nitrogen. Clean the crystal with a 3:1 mixture of hydrochloric acid and hydrogen peroxide for 10 minutes, followed by a rinse in deionized water and a blow dry with nitrogen. Finally, heat the crystal in a furnace at 400-450°C for 10-15 minutes to anneal the surface and remove any residual contaminants. Refer: 10.7567/APEX.8.121102,

Article Process and characterization of ohmic contacts for beta-phas...

Deposition of Ti/Au: Once the surface is clean, you can deposit the Ti/Au metal stack for the ohmic contact. You can use electron beam evaporation to deposit the metals:Evaporate 50 nm of Ti followed by 150 nm of Au. Make sure to keep the crystal at a low angle relative to the electron beam to reduce the risk of damage to the crystal surface. Refer:

Article Electrical and chemical analysis of Ti/Au contacts to β -Ga 2 O 3

Deposition of Ni/Au: After depositing the Ti/Au stack, you can deposit the Ni/Au metal stack for the Schottky barrier.Evaporate 50 nm of Ni followed by 150 nm of Au. Again, keep the crystal at a low angle relative to the electron beam to reduce the risk of damage to the surface. Refer:

Article Preparation, Structure, and Surface Chemistry of Ni-Au Singl...

By following these steps, you should be able to prepare the ohmic and Schottky contacts for your gallium oxide crystal. Note that the quality of the contacts will depend on several factors, including the cleanliness of the crystal surface, the quality of the metal deposition, and the annealing temperature. It may be helpful to test the electrical characteristics of the contacts to ensure that they meet your requirements.

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