The temperature dependence of the resistance (R-T) measurement of High Resistance State (HRS) gives the thermal activation energy (Ea) using Arrhenius equation as given below
R=R0exp(Ea/KBT)
So, please help me to explain the role of Thermal activation energy in the conduction mechanism of RRAM device.
Conduction mechanisms may be Ohmic, Schottky, Pool-Frenkel or Space charge limited conduction (SCLC) for filamentry type of switching.
Dear Vidit,
In order to give specific answer on your question you have to describe the material of the resistor.
The conduction mechanism depends on degree of crystallinity of the resistor material in addition to its doping. In case of nonohmic contact of the electrodes with resistor material the MS contact can impede the mobile charge carriers contributing to the overall resistance of the device. If the material contains grains with traps at the interfaces of the grains this will also affect the conduction mechanism inside the material.
The question as it stands in very general one needs that you specify your material.
Otherwise the condition of the existence of very mechanism is explained in the literature.
To fully answer this question one needs a complete chapter.
When I have time I will go for every conduction mechanism and outline it.
Best wishes
Dear Vidit,
In order to give specific answer on your question you have to describe the material of the resistor.
The conduction mechanism depends on degree of crystallinity of the resistor material in addition to its doping. In case of nonohmic contact of the electrodes with resistor material the MS contact can impede the mobile charge carriers contributing to the overall resistance of the device. If the material contains grains with traps at the interfaces of the grains this will also affect the conduction mechanism inside the material.
The question as it stands in very general one needs that you specify your material.
Otherwise the condition of the existence of very mechanism is explained in the literature.
To fully answer this question one needs a complete chapter.
When I have time I will go for every conduction mechanism and outline it.
Best wishes
Respected Professor Abdelhalim abdelnaby Zekry sir,
My material is pure phase Mn3O4 Nanoparticles having crystalize size ~25nm.
I got thermal activation energy nearly ~65 meV (mili electron-volt) of High resistance state (HRS) by using R-T (the temperature dependence of the resistance) analysis
Generally, the RRAM (Resistive switching Random access memory) device have two state- LRS (Low resistance state/On) and HRS (High Resistance state/OFF).
I-V (current-voltage characteristics) curves also explain the conduction mechanism.
But, I want to co-relate the conduction mechanism in HRS with thermal activation energy (Ea).
and special thanks to explain the some points of mechanisms such as role of grains in conduction mechanism.
Dear Vidit,
Welcome!
Such material, the undoped fine-grained semiconductors are termed thermistors.
Both the thermal generation of the mobile charge carriers and the their transport across the barriers across the grain boundaries are thermally activated processes.
The thermal generation of the electron hole pairs has an activation energy Ea= Eg/2 where Eg is the bandgap energy.
The other process of barriers at the grain boundary is also an activation process with the Ea= Eb where Eb is the barrier height at the grain boundaries.
The conductivity can be expressed by sigma= qun n+qup p
n and p are activated
and un and up are activated.
In order to get out which activation is dominated one needs to measure Eg.
If the Ea < Eg/2 then the transport is controlled by the grain boundaries.
Best wishes
For more information about the conduction in polycrystalline materials please follow the paper:Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
Best wishes
Respected Professor Abdelhalim abdelnaby Zekry Sir,
Thanks for your valuable answer.
First, I will calculate the bandgap energy (Eg) for our sample to know the relation between Eg and thermal activation energy (Ea).
I read the great paper that you suggested and it clear my some points regarding conduction in polycrystalline materials. Thanks for share this paper.
Thanks and regards
Vidit Pandey.
Russo, Ugo, Daniele Ielmini, Carlo Cagli, and Andrea L. Lacaita. "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices." IEEE Transactions on Electron Devices 56, no. 2 (2009): 186-192.
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