19 Questions 23 Answers 0 Followers
Questions related from David Coathup
I am currently utilising Raman spectroscopy for the first time, and am struggling to identify some peaks.I understand that Raman peaks are due to the inelastic scattering of light, whose...
13 September 2017 716 1 View
In most literature, I have read on Bi4Ti3O12 thin films, the presented XRD is commonly have very intense (117) orientated peaks. I understand that if I film have no matching lattice dimensions...
06 July 2017 4,873 1 View
I am looking at confirming the presence of magnetoelectric coupling in doped-BTO thin films. I have confirmed the presence of ferroelectricity and ferromagnetism independently using the triangular...
14 March 2017 8,466 8 View
I am looking at explaining undesirable MOS behaviors in a metal-ferroelectric-structure. I recently tried characterizing the capacitance-voltage behavior of a Bi4Ti3O12/P-Si junction, using a...
06 March 2017 4,498 1 View
I’m looking for information regarding the magnetization vs magnetic field response of platinised silicon substrates. I have recently performed MvH measurements of platinized silicon substrates...
14 February 2017 9,521 4 View
I am looking at explaining why "butterfly-like" capacitance-Voltage loops appear in ferroelectrics.In 2005, Pintilie et al explained the capacitance peaks by their occurrence during the change in...
13 February 2017 7,854 4 View
I have found that ZnO thin films show either metallic or insulate behaviours when annealed at 700OC in vacuum and ambient atmospheres respectively, and am looking for help explaining this...
25 January 2017 842 3 View
I am looking for help explaining an unknown phenomena when performing Capacitance-Voltage measurements of a MOS device utilizing insulative Bi4Ti3O12 thin films on Silicon substrates with ZnO...
09 January 2017 3,081 4 View
I have recently performed Impedance spectroscopy of ferroelectric Bi4Ti3O12 thin films on platinum, the cole-cole plot of which can be seen in the attached figure. I was expecting a single...
31 October 2016 3,916 7 View
I am looking at performing SiO2 etching off of silicon. My substrates have a Bi4Ti3O12 thin films on them which I wish to avoid damaging, so I intend to cover them in HF etching resist.I have...
24 October 2016 6,775 4 View
I am looking at forming MOS devices using Bi4Ti3O12 thin films on silicon substrates deposited by magnetron sputtering. In the literature, they achieve this by using standard RF-magnetron...
18 October 2016 9,024 4 View
I have recently performed Ferromagnetic measurements of doped BTO thin films. (see attached). My sample shows Ferromagnetic behaviors between the ranges of +-1.5KOe(red), with the substrates...
06 October 2016 6,907 1 View
I am looking for help with presenting XRD data for publication.I have two main queries, first is how to accurately identify peaks, and second refers to choosing which peaks to label and discuss,...
03 October 2016 1,915 4 View
I am looking at the integration of Bi4Ti3O12 thin films on Ultrananocrystaline diamond (UNCD) substrates. I deposit my thin films using RF-Sputtering, but am unable to do in-situ substrate...
12 September 2016 2,730 2 View
I am looking at performing ferromagnetic measurements of thin films using a Vibrating Sample Magnetometer. As my department does not possess one, I am having to travel quite a distance to use one,...
16 August 2016 6,306 12 View
I am attempting to use RF sputtering to deposition SiO2 thin films from a stoichiometric SiO2 target. I have used the same process to successfully deposit insulative Bi4Ti3O12 thin films. When I...
20 June 2016 9,585 10 View
I have been asked to support an intern with the development of a ultrananocrystaline thin film MOS device. We have some already developed ultrananocrystaline thin films of Si-substrates, but i...
13 June 2016 3,914 3 View
I am looking at using Platinumised Silicon substrates for thin film deposition in a RF magnetron sputtering system. I am experienced in using this system for deposition on Silicon substrates. but...
05 February 2016 10,052 4 View
I am looking at using ZnO as a semiconductor in a MOS device with a novel insulator. The insulator requires the device is anneal in atmosphere between 550OC and 750OC The ZnO films I have...
02 November 2015 3,284 6 View
