12 September 2016 2 3K Report

I am looking at the integration of Bi4Ti3O12 thin films on Ultrananocrystaline diamond (UNCD) substrates. I deposit my thin films using RF-Sputtering, but am unable to do in-situ substrate heating, so I rely on post deposition annealing to crystallize the thin films. I normally perform annealing in ambient atmosphere, producing good insulative, ferroelectric and dielectric properties.

However, due to the nature of the UNCD substrate, I have been limited to annealing the films under vacuum conditions.  From impedance spectroscopy, I have determined the films to possess a dielectric constant of 80, about 60% of what it should be when annealed in atmosphere. I am looking for references to confirm the dielectric properties of BTO thin films when annealed in vacuum. If anyone could provide any, I would be extremely grateful.

Best Wishes

Jamie

More David Coathup's questions See All
Similar questions and discussions