In agreement with what is written above I would add also the following. Around the middle of 20th century Simens launches Si-based development and deployment program. Si is preferred to Ge due to its higher temperature, at which begins to dominate intrinsic conductivity (related to the larger Si bandgap) and the less expensive yield (from the sand). At that time, the high quality of the Si / SiO2 interface is not yet known.
just a remark that the values Gregory quotes are the turn-on voltages for transistors, which are aroughly given by the built-in voltages of the pn junctions (~0.2 eV for Ge and 0.55eV for Si), but these are not the bandgaps (which are about twice as large).
Silicon as a semiconductor has wider bandgap than germanium and therefore it can be operated at a much higher temperature up to 120 degree centigrade . It interstice concentration is much less than Ge and therefore the reverse saturation current has much less values for Si which means less of currents. It breakdown voltage is greater than Ge for the same doping. It has a silicon dioxide which is very superior insulator that can be used as a constructing layers for the devices while GeO dissolves in water. Si is suitable for the planar integrated circuit technology.
In summary silicon is a prevailing semicondcutor material.
For more information please follow the link:https://www.researchgate.net/post/Why_and_how_is_silicon_prevailing_as_a_semiconductor