I have seen that people are trying to use laser annealing to replace RTA due to its localized treatment without damage substrate like glass (e.g. borosilicate glass). The reason given is that due to melting of glass during RTA. However, the melting point of borosilicate glass is up to 1600 degree, while RTA normally heats substrate up to 1000 degree, which is far below the melting point.
My guess is that it is just an inappropriate way saying. Even though the melting point is not reached, such a high temperature in substrate could possibly result in diffuse of atoms into active layers, decreases the cells performance. Then it comes out this question, does this really matters a lot? Did anyone see papers about this?
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