Can any one share with me the paper that has deep discussion about the doping density in those Transitional Metal Oxides (TMOs) material??
I find that in those literature that people reported doping concentration in material such as MoOx can goes up to 1E18 cm-3. However, considering the extreme low conductivity in those kind of material down to 1E-6 S/cm, if we use the semiconductor conductivity equation that the conductivity is a function of the carrier mobility and carrier concentration (e.g. doping). If the doping in MoOx goes as high as to 1E18, the conductivity would be > 1 S/cm, even we use low carrier mobility as low as 1cm^2/Vs.
So far, the small number of paper I have gone though, people all use high doping concentration without referring a paper with deep discussion on it. Any one has more papers that could resolve my question?
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