Hi
I want to simulate ITO/c-Si junction behavior and solar cell performance. Therefore, here comes to a question about Silvaco TCAD simulator. Is that possible to model TCO layer such as ITO as a highly conductive and n type semiconductor material? I know the way many people do are, for simplicity, treating ITO as a metal layer with reasonable work function.
Dear Chenjin,
welcome,
The conductive oxides behave metal like or as a degenerate semiconductor. This justifies the use of metal like description of the electronic properties since the fermi level lies inside the conduction band.
There is practical and theoretical evidence for such description. Why complicating the electronic description then.
For the electronic properties please follow the link:http://www4.ncsu.edu/~franzen/public_html/papers/CHEM_PHYS_2004.pdf
Best wishes
Yes, it is possible.
I would also advice you to consider the simulation-programme called Quokka. Quokka is specifically built for counductive boundry layer problems.
What value do you use for the refractive index of ITO? Do you set the imaginary part, k, equal to zero or a very small value to include some absorption?
Dear Chenjin,
Yes you can model TCO(ITO) with TCAD silvaco. Even nk file you can find in sopra data base of TCAD silvaco.
Best wishes
M. Imam
may ask someone who did before simulation with atlas silvaco, how can i simulate an arc layer on silicon solar?
i did like it mentioned on the manual but it doesn't work, nothing change,
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