why efficiency of solar cell decreases with increase in doping level of p-type region in PC1D software?(Asked by Deepika Jamwal, research scholar Jammu university).
Dear Veenu,
Hope you are well and every thing is good with you!
As for the dependence of the solar cell efficiency on the doping concentration of the p-substrate it is studied intensively in the literature.
It is found that the solar cell efficiency increases with doping up to about a doping of 10^17/cm^3 then it decreases again as the doping increases. This is because the complicated dependence of the efficiency on the material properties of the substrate.
The increase at the lower concentration is due to the reduction in the dark current of the solar cell while the Jph remains consatnt.
At the higher concentration, the Jph will begin to decrease because of the the decrease in the diffusion length of minority carriers. There is also the onset of the heavy doping effects where the dark current will increase instead of the decrease at the lower doping. It is so that the dark current current begins to increase.
I would like that you follow the book chapter: Chapter Solar cells and arrays: Principles, analysis and design
I set up a forum on the effect of p-substrate parameters on the solar cell performance. Please follow this forum at the RG link: https://www.researchgate.net/post/What_are_the_effects_of_p-substrate_parameters_on_the_performance_of_Si_solar_cells
Best wishes
Dear Veenu,
welcome!,
In order to interpret your results correctly , you have to tell us how does the reverse saturation current varies with the doping of the p-type substrate doping concentration ans also how does the short circuit current varies with substrate doping.
The increase of the doping has to effects; it decreases the lifetime of the minority carriers and diffusion constant as well as it decreases the minority carrier concentration which is electrons in this case.
The decrease of the diffusion coefficient and the lifetime decreases the the diffusion length and thereby decreases the photo current.
On the other side the decrease of the minority carrier concentration decreases the reverse saturation current which leads to increase in the open circuit voltage.
In the published results of the dependence of the conversion efficiency on the doping concentration of the p-substrate, one finds that the conversion efficiency increases up to doping concentration of 1x10^17/cm^3 reaching a maximum value at that doping and decreases again for higher doping. So, it depends on the investigated doping range.
I discussed this topic on research gate in the link:https://www.researchgate.net/post/What_are_the_effects_of_p-substrate_parameters_on_the_performance_of_Si_solar_cells
Best wishes
Dear Veenu,
Hope you are well and every thing is good with you!
As for the dependence of the solar cell efficiency on the doping concentration of the p-substrate it is studied intensively in the literature.
It is found that the solar cell efficiency increases with doping up to about a doping of 10^17/cm^3 then it decreases again as the doping increases. This is because the complicated dependence of the efficiency on the material properties of the substrate.
The increase at the lower concentration is due to the reduction in the dark current of the solar cell while the Jph remains consatnt.
At the higher concentration, the Jph will begin to decrease because of the the decrease in the diffusion length of minority carriers. There is also the onset of the heavy doping effects where the dark current will increase instead of the decrease at the lower doping. It is so that the dark current current begins to increase.
I would like that you follow the book chapter: Chapter Solar cells and arrays: Principles, analysis and design
I set up a forum on the effect of p-substrate parameters on the solar cell performance. Please follow this forum at the RG link: https://www.researchgate.net/post/What_are_the_effects_of_p-substrate_parameters_on_the_performance_of_Si_solar_cells
Best wishes
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