In RF sputtering, the typical growth rate of ZnO at power of 100 W is about 50 - 100 nm per hour. Our films were grown at 100W for 20 min and the tickness of the film from the cross sectional FESEM is 209 nm. How could the films be so thick?
Hello again.
The growth rate is highly dependent on the chamber geometry and especially the target diameter and target-substrate distance. If you sputter from a 12" target, with 100W you will probably have barely any growth rate (if you manage to maintain the plasma at all), from a 2" or smaller target, the growth rate you describe would not be that surprising if the substrate is close enough.
Dear Dr. Weippert,
Thank you very much for your time and energy to answer this question. You completely explained the problem to me and I got the answer. Thanks a lot.
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