I am working with solar cell simulation. So can I get some paper in which "Defect Density" and range of defect density value is discussed properly? I mean what is the range of the defect value? Please provide me some paper.
Chouhan, Arun Singh, Naga Prathibha Jasti, and Sushobhan Avasthi. "Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment." Materials Letters 221 (2018): 150-153.
The defects in semiconductors play an important role in controlling the electronic properties of semiconductors. The addition of impurities in controlled concentrations as dopants serve to adjust the mobile carrier concentrations either electrons of holes.
Such impurities create shallow energy levels in the energy gap.
There are other types of defects that act as traps to the mobile carriers. Such tarps have energy levels in the band gap also but they will be more effective when they lie near the middle energy gap.
Traps are characterized by a trap density Nt, a trap energy level Et and a capture cross section sigma which is the effectiveness of the trap to capture electrons or holes.
It is so one defines a a recombination life time Tau as a measure for the the traps to capture electrons and holes.
Tau= 1/ sigma Nt vth
where vth is the the thermal velocity of either electrons or holes.
This simple relationship can be used to see how traps are effecting the mobile carrier concentration.
Tau may be range from nanoseconds to milliseconds.
Nt can range from 10^10 /cm^3 to 10^16/cm^3
sigma can range from 10 ^-14 to 10^-16 cm^2
In fact the required Tau depends on the required device performance.
That is the static and the dynamic properties.
I would like to refer to the following literature:
Book Electronic devices with physical insight
For the traps in the solar cells please refer to the papers:Article Investigating the performance of formamidinium tin-based per...
and
Article Possible efficiency boosting of non-fullerene acceptor solar...