Hi all, 

According to the Site Binding model for Ion Sensitive FETs, the surface potential is related to pH as given by the following equation:

Ψo = 2.303(kT/q) (pHpzc - pH) (β/β+1)

where β is the sensitivity factor. Could anyone please provide the value of β for Si3N4 layer in ion sensitive FET devices?

Regards,

Raghu

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