Hi all,
According to the Site Binding model for Ion Sensitive FETs, the surface potential is related to pH as given by the following equation:
Ψo = 2.303(kT/q) (pHpzc - pH) (β/β+1)
where β is the sensitivity factor. Could anyone please provide the value of β for Si3N4 layer in ion sensitive FET devices?
Regards,
Raghu