The problem with silicon is the oxide film (SiO2) that surrounds each particle. The finer the particles, the more oxide. During sintering in vacuum or inert gas, the oxide layer does not disappear, but is even thicker. For this reason, the products made of pure silicon can not be produced by means of sintering.
The problem with silicon is the oxide film (SiO2) that surrounds each particle. The finer the particles, the more oxide. During sintering in vacuum or inert gas, the oxide layer does not disappear, but is even thicker. For this reason, the products made of pure silicon can not be produced by means of sintering.
The attached 1997 paper looks helpful. According to it "The sintering behavior of silicon (Si) nanoparticles is still not very well understood [23]. Si is covalently bonded with sintering temperatures between 0.75 Tm (beginning of the densification) and 0.98 Tm (maximum density)." There is much more information in the paper on particle growth, structure and sintering.
In my opinion, pure Si can be sintering at about 1300-1350oC (mp: 1414 oC), we used to use Si as a infiltrator to dense the porous preform, the temperature is about 1450oC, the liquid Si can fluid into the porous preform.
As we know the temperature of sinteriring is about 0.8 of melting point and the melting point of pure silicon about 1400 oC therefore the sinterireing temperatur is about 1120oC
I am totally agree with Dr Vadim, Dr Daniels and Dr Gao..
It's hard to control the presence of oxide layer on Si.. After all, as we all knew.. the stabilize structure of Si, are in the form of SiO2 (presence in nature as sand).. :-)
The best sintering temperature of Si, should be in the range of 1200 - 1450 degC. You should also try to verify the presence of oxide (with XRD and TEM)..
By definition the sintering temperature is approximately 0.8 of melting point of material. The melting point of silicon is know and you can easy calculate the proper value for sintering temperature