Hi,
I am conducting a literature review on RF-sputtered IGZO growth conditions to further improve the TFT fabrication process at our research center.
A crucial factor for IGZO and interface quality is sputtering power density. While some papers refer to power density (or just RF power and target diameter), most only refer to sputtering RF power.
I am thereby asking you what size target you generally use, so I can at least infer what is the most commonly used commercial target diameter and try to make sense of the data I am gathering. The sheer amount of papers makes it very time-consuming to message authors individually.
Many thanks for your kind collaboration!
These sizes should be adapted to the goal of what you want to deposit for. If you want to grow epitaxial material with homogenous thickness, the target needs to be substantially larger than the substrate. A rotating substrate geometry may reduce this requirement but may limit your process temperature range. In that case the target can also be smaller than the substrate.
For an industry standard 8" silicon wafer, you would therefore require a 12" sputtering target, while for 4" sapphire wafers 6" targets should do the job.
If you just want to do proof-of-concept research, smaller targets with smaller substrates will of course be sufficient.
Please note that the prizes of targets usually don't scale linearly with the size, so if smaller is possible, it's probably preferrable. Also, larger targets mean larger voltages, and of course a 3kV voltage tends to search for different paths while a 0.5kV voltage will still go through the wanted path (aka the plasma) smoothly, so larger targets may increase the requirements to chamber conditioning.
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