Hell, I have grown semiconducting film of SiC on four different substrates ( ZrO2, MgO, SiC, and Si) via RF-sputtering at a substrate temperature of 800 °C and found best crystalline film on Si. I have also observed variation in PL properties as a function of substrate. Most importantly, variation in structural properties and PL characteristics follow the same trend, i.e. best crystalline film was found to have highest crystallinity and lowest defect density. Is there be any other interpretation of these findings? Any help is appreciated in advance.
Hello,
Photoluminescence spectroscopy can also help you define the absorbance domain of your semi-conductor and by that you can know the radiation wavelengths that could activate your material (the energy of the photons that could induce charge mobility in your material).
I give you an example of TiO2 : in a studied wavelength range (typically in the UV-Vis range to see if the material is active under visible light), the PL peak will more intense when TiO2 absorbs near the UV range and decreases when it starts to shift towards visible light (when you dope or you modify your material). By that, we can know for example if we could use our material for solar light perspectives.
I think that you could take such information, in addition to crystallinity and defects amount, from PL to study the application domain of your material.
Good luck
Regards
Loraine
Hi
Well, the interface between the thin film and substrate forming defective layer because of the lattice mismatch. I explained this in my article entitled " Opto-electronic characterizations of oriented nano-structure CdSe film/Si (001) heterostructure"
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