I am implementing InAs/GaSb superlattice mid-wavelength infrared pin photodiode structure in SILVACO ATLAS. I am not able to understand what does" ML" in device structure means and how can i do this structure in SILVACO ATLAS. I need help on this.
The device structure is attached below and paper from which structure is taken is also attached.
The structure is a super lattice composed of alternating thin layers from InAs and GaSb. The InAs layers thickness is 7 molecular layers and that of the GaAs is 4 molecular layers.
For the Sivacp description of such super lattice structure please follow the paper:
Article Electrical modeling of InAs/GaSb superlattice mid-wavelength...
Best wishes
ML is an abbreviation for Molecular layer; so 7ML InAs means a stack of 7 molecular layers from GaAs and 4 GaSb are 4 layers of GaAs. The two stacks constitutes one period of the supper lattice. Given the thickness of the period in nm and the thickness of the layer one can calculate the number of the periods in the given layer. Therefore one can draw such structure and define its materials and their parameters. You may find an example of such superlattice structure in the Silvaco tutorials.
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Sorry Sir I didn't understand the first line " 7ML InAs means a stack of 7 molecular layers from GaAs and 4 GaSb are 4 layers of GaAs". Can you please explain once. how can you say that 7ML inAs is 7 layer of GaAs ? Prof Dr. Abdelhalim abdelnaby Zekry
The structure is a super lattice composed of alternating thin layers from InAs and GaSb. The InAs layers thickness is 7 molecular layers and that of the GaAs is 4 molecular layers.
For the Sivacp description of such super lattice structure please follow the paper:
Article Electrical modeling of InAs/GaSb superlattice mid-wavelength...
Best wishes
In the structure i have 7 InAs /4 GaSb. So I have to put 7 molecular layers of InAs or GaAs(as mentioned in your answer)? similarly for 4 GaSb i will use 4 molecular layers of GaSb or GaAs(as mentioned in your answer)? I am getting confusion in this Prof Dr Abdelhalim abdelnaby Zekry .
Dear Neha,
Sure you have to stack an alternating layers of InAs with 4 molecular layers thickness and GaSb layers with 4 molecular layers thickness.
Yes as you exactly you said.
Best wishes
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