While doped reservoir or source or drain the doping concentration describe by MOLAR FRACTION=5*10^(-3)
In chemistry, the mole fraction x_i is defined as the amount of a constituent n_i divided by the total amount of all constituents in a mixture n_{tot}[1]:
x_i = \frac{n_i}{n_{tot}}
The sum of all the mole fractions is equal to 1:
\sum_{i=1}^{N} n_i = n_{tot} ; \; \sum_{i=1}^{N} x_i = 1
The mole fraction is also called the amount fraction.[1] It is identical to the number fraction, which is defined as the number of molecules of a constituent N_i divided by the total number of all molecules N_{tot}. It is one way of expressing the composition of a mixture with a dimensionless quantity (mass fraction is another). The mole fraction is sometimes denoted by the lowercase Greek letter χ (chi) instead of a Roman x.[2][3] For mixtures of gases, IUPAC recommends the letter y.[1
from Wikipedia "Mole fraction", but you can find it also in other chemical books
for example in devices with Si(1-x)Ge(x) materials, x is mole fraction. it defines that what the percentage of atom Ge is used in device so that constitute the material SiGe.
Molar fraction is related in semiconductors in such a way that like we are talking about AlxGa1-xAs then how much amount of Aluminium aur Gallium is present in the whole compound or ratio of no. of moles of Aluminium to the ratio of all components in AlxGa1-xAs or ratio of no. of moles of Gallium to the ratio of all components in AlxGa1-xAs. Basically it is amount or number of atoms/molecules function with bandgap energy, temperature etc.
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