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Questions related from Brajesh Rawat
We are using electric current(ec) module under AC/DC analysis, for current calculation, but it gives only drift current.
27 November 2019 4,706 0 View
Like, A-B stack bilayer graphene has the interlayer coupling energy of 0.35eV. (http://ieeexplore.ieee.org/document/5091138/)
15 September 2017 7,086 1 View
Is 0.6nm justifiable for zero leakage current in Si MOSFET ?
24 April 2015 7,442 6 View
I am thinking that sub-50nm represent either 50nm MOSFET technology or 50nm gate length.
20 February 2014 9,672 7 View
I want to measure the change in threshold voltage due to drain bias voltage for Graphene field effect transistor, but it has zero band gap. So, it produces larger punch-through and it is difficult...
10 February 2014 8,816 4 View
I am attaching my procedure of unit conversion; I am confused with units of doping density.
09 January 2014 8,379 2 View
Will I define Gaphene by its effective mass in silvaco as a channel material?
15 December 2012 8,310 6 View
While doped reservoir or source or drain the doping concentration describe by MOLAR FRACTION=5*10^(-3)
11 December 2012 6,284 3 View