11 Questions 12 Answers 0 Followers
Questions related from Brajesh Rawat
We are using electric current(ec) module under AC/DC analysis, for current calculation, but it gives only drift current.
27 November 2019 4,757 0 View
Like, A-B stack bilayer graphene has the interlayer coupling energy of 0.35eV. (http://ieeexplore.ieee.org/document/5091138/)
15 September 2017 7,147 1 View
Is [ION, IOFF]= IDS[VGS, VGS-VDS] or [ION, IOFF]=IDS[max(IDS), min(IDS)].
20 April 2016 2,249 6 View
Is the analytical expression of electron concentration in bilayer graphene nanoribbon available in literature ? Is the analytical expression of electron concentration in bilayer graphene...
28 January 2016 2,721 0 View
Is 0.6nm justifiable for zero leakage current in Si MOSFET ?
24 April 2015 7,477 6 View
What are the pefromance parameters I need to consider before selecting the source-drain doping density in graphene field-effect transistors.
03 July 2014 7,929 2 View
I am thinking that sub-50nm represent either 50nm MOSFET technology or 50nm gate length.
20 February 2014 9,717 7 View
I want to measure the change in threshold voltage due to drain bias voltage for Graphene field effect transistor, but it has zero band gap. So, it produces larger punch-through and it is difficult...
10 February 2014 8,862 4 View
I am attaching my procedure of unit conversion; I am confused with units of doping density.
09 January 2014 8,436 2 View
Will I define Gaphene by its effective mass in silvaco as a channel material?
15 December 2012 8,355 6 View
While doped reservoir or source or drain the doping concentration describe by MOLAR FRACTION=5*10^(-3)
11 December 2012 6,328 3 View