Dear Amit,

By stressing the semiconductor say silicon such that it is elongated that is tension stress, the energy gap becomes smaller as a consequence of less confinement of the electrons in the material. In the opposite if the material is compressed its inter atomic distance in the direction of the compression will be smaller the confinement will increase and the energy gap increases.

Please look at the thesis in the link: https://scholarworks.umass.edu/cgi/viewcontent.cgi?referer=https://www.google.com.eg/&httpsredir=1&article=1337&context=open_access_dissertations

Best wishes

Amit:

Best regards.

Here are attached two very important papers and accurate analysis relevant to your question. The first paper is from Professor Dr. Siegfried Selberherr's research group and if you are working in nanoscale transport analysis of miniature MOSFET devices, you should have read some articles from Professor Selberherr as his modeling approach is pretty thorough and highly precisional. The second attached thesis is also very important for you which is done in University of Florida where ECE department is already well-known in solid state electronics and nanotechnology research in USA.

Please recommend my answer if these articles are useful for your strain effect modeling. A recommendation helps the responder's research gate profile.

Sincerely,

Dr. Nabil Shovon Ashraf.

Dear All

Thank you all for the help.

Can i implement the same concept in Cylindrical Gate all around nanowire MOSFET or do i need to modify the modeling.

Also how to find the change in mobility for Cylindrical Gate all around nanowire MOSFET.